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1 article(s) from Ohno, Shinya

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

Hiroya Tanaka,
Shinya Ohno,
Kazushi Miki and
Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

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Figure 1: (a) Filled-state STM image of Si(113)-(3 × 2). Image size: 30 × 30 nm², V_s = −2.0 V, I_t = 0.05 nA. ...

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Figure 2: A series of filled-state STM images of Si(113)-(3 × 2) upon oxidation at an oxygen pressure of 1.3 ...

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Figure 3: A series of filled-state STM images of Si(113)-(3 × 2) upon oxidation at an oxygen pressure of 1.3 ...

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Figure 4: (a) Magnified image of the island in (d) of Figure 3. (b) Line profile along the line A–B in (a).

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Figure 5: A series of filled-state STM images of Si(113)-(3 × 2) upon oxidation at an oxygen pressure of 6.5 ...

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Figure 6: Temperature–pressure growth mode diagram for thermal oxidation on (a) Si(113) and (b) Si(111).

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Figure 7: (a) High-resolution STM image of Si(113)-(3 × 2) upon oxidation at an oxygen pressure of 2.6 × 10⁻⁵...

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Figure 8: (a) High-resolution STM image of Si(113)-(3 × 2) upon oxidation at an oxygen pressure of 2.6 × 10⁻⁵...

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Published 03 Feb 2022

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